Configurable Logic Gates Using Polarity-Controlled Silicon Nanowire Gate-All-Around FETs
نویسندگان
چکیده
منابع مشابه
Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-lm gates patterned by nanostencil lithography
0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.07.048 ⇑ Corresponding author. E-mail address: [email protected] (D. Sacch We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nan...
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Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2014
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2014.2329919